| 08:45 WELCOME |
| SESSION 1: Plasma etching processes for advanced CMOS, memory & quantum technologies |
| 9:00 - 9:30 a.m |
MOTOMAYA Koichi, IBM - Invited - Fully subtractive Ru Topvia as a post-Cu alternative metal interconnect for advanced technology nodes |
| 9:30 - 9:50 a.m |
RAJENDIRAN Marimuthu, Silicon Austria Labs - Plasma-Enhanced Atomic Layer Etching of MBE- and ALD-Grown Ultrathin HZO for Ferroelectric Tunnel Junctions |
| 9:50 - 10:10 a.m |
KRIEGER Guillaume, Eindhoven University of Technology - Atomic layer etching of NbTiN: extending ALE chemistry from binary compounds to ternary materials |
| 10:10 - 10:30 a.m |
YAN Qiangqiang, Lam Research - High-throughout Thick SiO2 Etching for Si Photonics |
| 10:30 - 10:50 a.m Coffee Break |
| 10:50 - 11:10 a.m |
OUJANBA Mehdi, CEA-Leti - GeTe plasma etch process development for RF switch applications |
| 11:10 - 11:30 a.m |
LILIENTHAL Katharina, Fraunhofer IPMS - Plasma Etch development for ZrN superconductors |
| 11:30 - 1:00 p.m Lunch Break |
| SESSION 2: Plasma etching processes for more than Moore applications |
| 1:00 - 1:30 p.m |
HASSAN Karim, CEA-Leti - Invited - Advanced photonics platforms based on SOI, SiN, and heterogeneous integration |
| 1:30 - 1:50 p.m |
POSSEME Nasrin, STMicroelectronics - Deep trench etching optimization: comparison of Bosch and RIE processes |
| 1:50 - 2:10 p.m |
METZNER Robert, Scia - Novel Ion Beam Techniques for Structuring Lithium-Niobate PICs and Improving Wafer Yield |
| 2:10 - 2:30 p.m |
BEDOUI Giovanni, CEA-Leti - HBr/H+ Plasma Etching of GeSe-GeTe Chalcogenide Films for Integrated Photonics: Morphology of Blanket and Patterned Structures |
| 2:30 - 2:50 p.m |
SYLVESTRE Nael, CEA-Leti - Reactive ion etching of LiNbO3 waveguides: Influence of fluorine-based gas chemistry on morphology and etch rates |
| 2:50 - 3:10 p.m |
XU Xingxing, Lam Research Service Co., Ltd - Selectivity Enhancement for Residue-free Thin ONO Stack Etch |
| 3:10 - 3:30 p.m Coffee Break |
| SESSION 3: Emerging plasma etching concept and technology |
| 3:30 - 4:00 p.m |
BANNISTER Julie, TEL - Invited - Innovating Etch Technology for Emerging Market Applications |
| 4:00 - 4:20 p.m |
ADJABI Madjid, GREMI - Cryogenic Atomic Layer Etching of MoS2 using cyclic and Argon plasma steps |
| 4:20 - 4:40 p.m |
NESTERENKO Iurii, Silicon Austria Labs GmbH - Shift of the Atomic Layer Etching Ion Energy Window for AlN Due to Voltage Drop Across Dielectric Layers |
| 4:40 - 5:00 p.m |
BEZARD Philippe, IMEC - Transient Assisted Processing (TAP): a sustainable, flexible and precise plasma etching approach |
| 5:00 - 5:20 p.m |
ABZI Mohammed Amine, GREMI - Damage-free Gallium Nitride etching: High etch rate inductively coupled plasma Cl2/Ar process combined with retarding field energy analyser controlled SF6 atomic layer etching |
| 5:20 - 5:40 p.m |
VALLAT Rémi, IMEC - Extending the use of CAR at 24nm pitch Line / Space by DSA rectification: strategies for roughness improvement |
| 5:40 - 7:00 p.m POSTER SESSION |
- P01 POSSEME Nicolas, CEA-Leti - Benefit of post etch treatment for defectivity improvement in the BEOL
- P02 MORENO HAGELSIEB Luis, IMEC - SWIR Photodiodes Technologies Patterning from Organics to Quantum Dots
- P03 GIL Hong Seong, Sungkyunkwan University - Enhanced SiGe/Si Selectivity in Pulsed NF3 Remote Plasma through Control of F and F2 Chemistry
- P04 XU XiuMei, IMEC - Test vehicle and metrology for SiGe cavity etch inspection
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- P05 PARGON Erwine, LTM/CNRS - Optical losses of PECVD SiN waveguides for CMOS compatible photonic platform: comparison between experiment and modeling
- P06 CHUNG Patrick, Lam Research Corporation. CSBG Engineering - Enabling Next Generation SJMOSFET Devices Through 50:1 High Aspect Ratio Etching on Syndion™ GP Plus
- P07 KOZUCH Sandra, CEA-LETI - Study of damages induced by ultra-violet photons from a Cl2/Ar plasma on N-polar n-GaN
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- P08 PLATE Paul, SENTECH Instruments GmbH - Atomic Layer Etching (ALE): Enabling Atomic Precision for Advanced Semiconductor Engineering
- P09 HOSSEINI Vahide, Fraunhofer ENAS institute - Investigation of HF Vapor-Phase Metal-Assisted Chemical Etching (MACE) Influenced by Noble Metal Dewetting: Linking Catalyst
- P10 TIAN Tian, University of Orleans - Plasma Cryogenic Etching for Amorphous Carbon: Temperature-dependent etching mechanism study
- P11 HONG Daeun, Sungkyunkwan University (SKKU) - Selective Isotropic Atomic layer Etching of Si3N4 over SiO2 with Surface Fluorination using CF4/H2O Plasma and Thermal Heating
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- P12 AIGBE Williams Osagbemwonrue, Fraunhofer Institute for Electronic Nano Systems ENAS - Knowledge Graph-Enhanced Feature Engineering for Interpretable Machine Learning for Feature profiles Prediction in Deep Reactive
- P13 NIZENKOV Paul, boltzplatz - numerical plasma dynamics GmbH - Verification and validation of the open-source code PICLas for capacitively coupled plasma discharges in etching applications
- P14 ALOISIO Marco, STMicroelectronics - Impact of Trace Metallic Contamination on BEOL Dual Damascene Dry etch chambers
- P15 TILLOCHER Thomas, GREMI - Université d'Orléans/CNRS - Mass spectrometry analysis of adsorbed species in cryogenic etching of SiO2 by SF6/H2 plasma
- P16 ZAKHAROV Yury, JSC «Molecular Electronics Research Institute» (MERI) - On the spatial uniformity of particle profiles in remote plasma reactor for photoresist ashing on 300 mm wafers
- P17 DESHMUKH Aditya, Fraunhofer Institute for Electronic Nano Systems - Uncertainty-Aware Etching Depth Prediction from In-Situ Sensor Data with Minimal Experiments & Interpretability for the Bosch Process
- P18 GEROUVILLE Emilie, SPECS - Operando NAP-XPS During Plasma Processing
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- P19 BÖHM Lenia, Fraunhofer Institute for Electronic Nano Systems ENAS - Experimental investigations of metal-assisted plasma etching of silicon using hydrogen
- P20 MESSAOUDI Axel, CEA-LETI - Study of plasma-surface interactions for direct bonding application
- P21 SARRAZIN Aurélien, CEA-Leti - How gaseous effluent analysis enhances understanding of plasma processes and paves the way toward sustainability
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- P22 HA Heeju, Sungkyunkwan University (SKKU) - Selective Plasma Etching of Silicon Boride Hard Mask using Fluorocarbons and Nitrogen Trifluoride
- P23 LILIENTHAL Katharina, Fraunhofer IPMS - Sustainable Wet Cleaning for Residue Removal in BEOL integration flow
- P24 HEDIR Melissa, LTM / UGA - Direct transfer by plasma etching of 2.5D patterns obtained by grayscale lithography
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